Lattice sites of implanted Fe in Si

The angular distribution of − particles emitted by the radioactive isotope Fe was monitored following implantation into Si single crystals at fluences from 1.4 1012 cm−2 to 1 1014 cm−2. We identified Fe on three distinct sites: ideal substitutional, displaced substitutional and displaced tetrahedral interstitial. Whereas displaced substitutional Fe was dominating for annealing temperatures below 500 °C, annealing between 500–700 °C caused the majority of Fe to occupy displaced tetrahedral interstitial sites. Ideal substitutional positions were increasingly populated following annealing at 800 °C and above. A comparison of the emission channeling results to Mössbauer and electron paramagnetic resonance experiments is given.